IRS2153DSPBF vs IRS2153DSTRPBF Perbandingan

Perbandingan bersamaan detil IRS2153DSPBF dari Infineon dan IRS2153DSTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2153DSPBF IRS2153DSTRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-bridge gate driver with RC input oscillator —
Configuration High-side + low-side driver, half-bridge —
Jumlah Output 2 (HO, LO) —
Maximum Offset Voltage (Voffset) 600 V —
VCC Supply Voltage 10 V to 20 V —
VBS High-side Supply Voltage VCC + 0.3 V (typical bootstrap) —
Gate Drive Source Current (IO+) 130 mA typical —
Gate Drive Sink Current (IO-) 270 mA typical —
Rise Time (tr) [DATA_NEEDED: tr] (typical ~100 ns) —
Fall Time (tf) [DATA_NEEDED: tf] (typical ~50 ns) —
Internal Deadtime ~1.2 us —
Suhu Kerja -40 C to +125 C —
Paket 8-SOIC (SOIC-8) 8-pin SOIC
Input Type RC-input oscillator (no external PWM required) —
Logic Polarity Inverting / Non-inverting per channel —
Undervoltage Lockout Yes (VCC) —
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
Tipe Mounting Surface Mount Surface Mount
Topologi — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
Rentang Suhu Kerja — -40C to +125C
Status RoHS — Compliant
Lead-Free — Yes

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