IRS2153DSPBF vs IRS2153DSTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRS2153DSPBF sa pamamagitan ng Infineon at IRS2153DSTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRS2153DSPBF IRS2153DSTRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Half-bridge gate driver with RC input oscillator —
Configuration High-side + low-side driver, half-bridge —
Bilang ng Outputs 2 (HO, LO) —
Maximum Offset Voltage (Voffset) 600 V —
VCC Supply Voltage 10 V to 20 V —
VBS High-side Supply Voltage VCC + 0.3 V (typical bootstrap) —
Gate Drive Source Current (IO+) 130 mA typical —
Gate Drive Sink Current (IO-) 270 mA typical —
Rise Time (tr) [DATA_NEEDED: tr] (typical ~100 ns) —
Fall Time (tf) [DATA_NEEDED: tf] (typical ~50 ns) —
Internal Deadtime ~1.2 us —
Temperature na Operasyon -40 C to +125 C —
Packhaging 8-SOIC (SOIC-8) 8-pin SOIC
Input Type RC-input oscillator (no external PWM required) —
Logic Polarity Inverting / Non-inverting per channel —
Undervoltage Lockout Yes (VCC) —
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
Uri ng Pagpapasok Surface Mount Surface Mount
Topolohiya — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
Hanay ng Temperature na Operasyon — -40C to +125C
Tindminan RoHS — Compliant
Lead-Free — Yes

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