ISA150233C03LMDSXTMA1 vs AUIRF7640S2TR Perbandingan

Perbandingan bersamaan detil ISA150233C03LMDSXTMA1 dari Infineon dan AUIRF7640S2TR dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISA150233C03LMDSXTMA1 AUIRF7640S2TR
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (1 N + 1 P) —
Drain-Source Voltage (VDS) 30 V 60 V
N-channel Continuous Drain Current (Ta) 7.6 A —
N-channel Continuous Drain Current (Tc) 10.2 A —
P-channel Continuous Drain Current (Ta) 6.6 A —
P-channel Continuous Drain Current (Tc) 8.8 A —
Total Power Dissipation (Ta) 1.4 W —
Total Power Dissipation (Tc) 2.5 W —
Paket PG-DSO-8-920 (SO-8 with thermal pad) DirectFET SB (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Marking Code 1523C03L —
Technology OptiMOS 3 trench MOSFET HEXFET Power MOSFET (Automotive Grade)
Channel Type N-channel + P-channel enhancement mode —
Rentang Suhu Kerja -55 C to +150 C (junction) -40C to +150C [DATA_NEEDED: junction temp upper limit]
Status RoHS Compliant Compliant [DATA_NEEDED: confirmed in datasheet]
FET Type — N-Channel
Continuous Drain Current (ID) @ TA=25C — 5.8 A
Continuous Drain Current (ID) @ TC=25C — 21 A
Power Dissipation (PD) @ TA=25C — 2.4 W
Power Dissipation (PD) @ TC=25C — 30 W
On-Resistance RDS(on) — 36 mΩ
Total Gate Charge (Qg) — 7.3 nC
Automotive Qualification — AEC-Q101 (Automotive Grade per datasheet)
Primary Application — Automotive Class D audio amplifier output stage

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