ISA150233C03LMDSXTMA1 vs AUIRF7640S2TR 比較
詳細並排比較 ISA150233C03LMDSXTMA1 由 Infineon 與 AUIRF7640S2TR 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
ISA150233C03LMDSXTMA1 ✓ 啟用中
規格比較
| 參數 | ISA150233C03LMDSXTMA1 | AUIRF7640S2TR |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (1 N + 1 P) | — |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| N-channel Continuous Drain Current (Ta) | 7.6 A | — |
| N-channel Continuous Drain Current (Tc) | 10.2 A | — |
| P-channel Continuous Drain Current (Ta) | 6.6 A | — |
| P-channel Continuous Drain Current (Tc) | 8.8 A | — |
| Total Power Dissipation (Ta) | 1.4 W | — |
| Total Power Dissipation (Tc) | 2.5 W | — |
| 封裝 | PG-DSO-8-920 (SO-8 with thermal pad) | DirectFET SB (Surface Mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Marking Code | 1523C03L | — |
| Technology | OptiMOS 3 trench MOSFET | HEXFET Power MOSFET (Automotive Grade) |
| Channel Type | N-channel + P-channel enhancement mode | — |
| 工作溫度範圍 | -55 C to +150 C (junction) | -40C to +150C [DATA_NEEDED: junction temp upper limit] |
| RoHS 狀態 | Compliant | Compliant [DATA_NEEDED: confirmed in datasheet] |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) @ TA=25C | — | 5.8 A |
| Continuous Drain Current (ID) @ TC=25C | — | 21 A |
| Power Dissipation (PD) @ TA=25C | — | 2.4 W |
| Power Dissipation (PD) @ TC=25C | — | 30 W |
| On-Resistance RDS(on) | — | 36 mΩ |
| Total Gate Charge (Qg) | — | 7.3 nC |
| Automotive Qualification | — | AEC-Q101 (Automotive Grade per datasheet) |
| Primary Application | — | Automotive Class D audio amplifier output stage |