ISC015N06NM5LF2ATMA1 vs IAUC120N04S6N009ATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N06NM5LF2ATMA1 dari Infineon dan IAUC120N04S6N009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC015N06NM5LF2ATMA1 IAUC120N04S6N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 Linear FET 2 (N-Channel) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V —
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Suhu Hubung Kerja -55 °C to +175 °C -55 °C to +175 °C
Paket PG-TDSON-8 FL (5x6 mm) PG-TDSON-8-33 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
Arus Kedip Pengecor — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
Automotive Qualification — AEC-Q101
Level MSL — 1
Lead-Free / Halogen-Free — Yes (per Infineon product page)

Spek dan Sumber

IAUC120N04S6N009ATMA1

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