ISC015N06NM5LF2ATMA1 vs IAUC120N04S6N009ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5LF2ATMA1 disebabkan oleh Infineon dan IAUC120N04S6N009ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N06NM5LF2ATMA1 IAUC120N04S6N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 Linear FET 2 (N-Channel) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V —
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Suhu Hubungan Operasi -55 °C to +175 °C -55 °C to +175 °C
Kemasan PG-TDSON-8 FL (5x6 mm) PG-TDSON-8-33 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
Arus Alir Gesa — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
Automotive Qualification — AEC-Q101
Aras MSL — 1
Lead-Free / Halogen-Free — Yes (per Infineon product page)

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