ISC015N06NM5LF2ATMA1 vs IQEH54NE2LM7UCGATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N06NM5LF2ATMA1 dari Infineon dan IQEH54NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC015N06NM5LF2ATMA1 IQEH54NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 Linear FET 2 (N-Channel) —
Drain-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID) at Ta 32 A 52 A
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V [DATA_NEEDED: VGS(th) typical/min/max]
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC [DATA_NEEDED: Qg typical in nC]
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8 FL (5x6 mm) PG-TTFN-9-3
Tipe Mounting Surface Mount Surface Mount
RoHS Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Channel Type — N-Channel
Continuous Drain Current (ID) at Tc — 406 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 150 W
On-Resistance (RDS(on)) at 10V VGS — [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Rentang Suhu Kerja — -55C to +150C (typical MOSFET range)
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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