ISC015N06NM5LF2ATMA1 vs IQEH54NE2LM7UCGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5LF2ATMA1 disebabkan oleh Infineon dan IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ AktifInfineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC015N06NM5LF2ATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | — |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID) at Ta | 32 A | 52 A |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 217 W | — |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | [DATA_NEEDED: Qg typical in nC] |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8 FL (5x6 mm) | PG-TTFN-9-3 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Gambaran Suhu Operasi | — | -55C to +150C (typical MOSFET range) |
| Status RoHS | — | Compliant |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |