ISC024N08NM7ATMA1 vs ISC028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISC024N08NM7ATMA1 dari Infineon dan ISC028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC024N08NM7ATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) at Ta=25C 24 A —
Continuous Drain Current (Id) at Tc 167 A —
Power Dissipation (Pd) at Ta=25C 3 W —
Power Dissipation (Pd) at Tc 150 W —
Tipe Mounting Surface Mount Surface Mount
Paket / Case PG-TDSON-8 (SSO8) —
Rentang Suhu Kerja -55 C to +175 C —
Gate Threshold Voltage (typ) [DATA_NEEDED: gate threshold voltage] —
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) typical value] —
Total Gate Charge Qg (typ) [DATA_NEEDED: total gate charge] —
Status RoHS Compliant —
Bebas Halogen Yes —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Technology OptiMOS 7 trench MOSFET —
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubung Kerja — -55 C to +175 C
Paket — PG-TDSON-8-62 (5x6 mm) with exposed pad
RoHS / Lead-Free — Yes (RoHS compliant)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon