ISC024N08NM7ATMA1 vs ISC028N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC024N08NM7ATMA1 disebabkan oleh Infineon dan ISC028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC024N08NM7ATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) at Ta=25C 24 A —
Continuous Drain Current (Id) at Tc 167 A —
Power Dissipation (Pd) at Ta=25C 3 W —
Power Dissipation (Pd) at Tc 150 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case PG-TDSON-8 (SSO8) —
Gambaran Suhu Operasi -55 C to +175 C —
Gate Threshold Voltage (typ) [DATA_NEEDED: gate threshold voltage] —
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) typical value] —
Total Gate Charge Qg (typ) [DATA_NEEDED: total gate charge] —
Status RoHS Compliant —
Boson Bebas Yes —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Technology OptiMOS 7 trench MOSFET —
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan — PG-TDSON-8-62 (5x6 mm) with exposed pad
RoHS / Lead-Free — Yes (RoHS compliant)

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