ISC037N12NM6ATMA1 vs IPTC054N15NM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC037N12NM6ATMA1 dari Infineon dan IPTC054N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC037N12NM6ATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Paket | PG-TDSON-8 FL (SuperSO8) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Tipe Mounting | Surface Mount | Surface Mount (top-side cooled) |
| Rentang Suhu Kerja | -55C to +175C (junction) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 (IPT family) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25°C | — | 17.5 A |
| Continuous Drain Current (ID) at TC=25°C | — | 143 A |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Power Dissipation (PD) at TC=25°C | — | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | — | 5.4 mΩ |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) typical | — | 58 nC |
| Forward Body Diode Voltage (VSD) | — | 0.83 V |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |