ISC037N12NM6ATMA1 vs IPTG025N15NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC037N12NM6ATMA1 dari Infineon dan IPTG025N15NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC037N12NM6ATMA1 IPTG025N15NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6 (N-channel trench MOSFET) OptiMOS 6 150 V (N-channel trench)
Drain-Source Voltage (Vds) 120 V —
Continuous Drain Current (Id) at Ta=25C 19.2 A —
Pulsed Drain Current (Idm) at Tc 163 A —
On-Resistance Rds(on) typ at Vgs=10V 3.7 mOhm —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 214 W —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Gate Charge (Qg) typ [DATA_NEEDED: Qg total] —
Paket PG-TDSON-8 FL (SuperSO8) PG-HSOG-8-1 (TOLG)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (junction) -55 C to +175 C (typical for OptiMOS 6)
Status RoHS Compliant Compliant
Avalanche Energy Rated Yes (single-pulse) —
Level MSL 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TA=25C — 26 A
Continuous Drain Current (ID) at TC=25C — 264 A (pulsed)
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

Spek dan Sumber

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