ISC037N12NM6ATMA1 vs IPTG025N15NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC037N12NM6ATMA1 disebabkan oleh Infineon dan IPTG025N15NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC037N12NM6ATMA1 IPTG025N15NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6 (N-channel trench MOSFET) OptiMOS 6 150 V (N-channel trench)
Drain-Source Voltage (Vds) 120 V —
Continuous Drain Current (Id) at Ta=25C 19.2 A —
Pulsed Drain Current (Idm) at Tc 163 A —
On-Resistance Rds(on) typ at Vgs=10V 3.7 mOhm —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 214 W —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Gate Charge (Qg) typ [DATA_NEEDED: Qg total] —
Kemasan PG-TDSON-8 FL (SuperSO8) PG-HSOG-8-1 (TOLG)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +175 C (typical for OptiMOS 6)
Status RoHS Compliant Compliant
Avalanche Energy Rated Yes (single-pulse) —
Aras MSL 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TA=25C — 26 A
Continuous Drain Current (ID) at TC=25C — 264 A (pulsed)
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

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