ISC045N03L5SATMA1 vs IGLR70R270D2SXUMA1 Perbandingan
Perbandingan bersamaan detil ISC045N03L5SATMA1 dari Infineon dan IGLR70R270D2SXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC045N03L5SATMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 / Trench | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Drain-Source Voltage (VDS) | 30 V | 700 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Paket | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TSON-8-8 (ThinPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C | -40C to +150C (junction) |
| Status RoHS | Compliant | Compliant |
| Product Family | — | CoolGaN™ G5 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 7.3 A |
| Power Dissipation (PD, Tc) | — | 28 W |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |