ISC045N03L5SATMA1 vs IGLR70R270D2SXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC045N03L5SATMA1 sa pamamagitan ng Infineon at IGLR70R270D2SXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 ✓ NakahandaInfineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC045N03L5SATMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 / Trench | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Drain-Source Voltage (VDS) | 30 V | 700 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Packhaging | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TSON-8-8 (ThinPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -40C to +150C (junction) |
| Tindminan RoHS | Compliant | Compliant |
| Product Family | — | CoolGaN™ G5 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 7.3 A |
| Power Dissipation (PD, Tc) | — | 28 W |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |