ISC046N13NM6ATMA1 vs ISC0802NLSATMA1 Perbandingan
Perbandingan bersamaan detil ISC046N13NM6ATMA1 dari Infineon dan ISC0802NLSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC046N13NM6ATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 100 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Paket / Case | PG-TDSON-8 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C | -55 C to +175 C |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (Power MOSFET) |
| Gate Drive (recommended) | 10 V (typical) | — |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Series | — | OptiMOS 5 |
| Part Number | — | ISC0802NLSATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 150 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| RDS(on) max at VGS=10V | — | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | — | 2.5 W |
| Power Dissipation (Pd) at Tc | — | 125 W |
| Paket | — | PG-TDSON-8-7 (SuperSO8 5x6 mm) |