ISC046N13NM6ATMA1 vs ISC0802NLSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC046N13NM6ATMA1 disebabkan oleh Infineon dan ISC0802NLSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC046N13NM6ATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 100 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Kemasan / Case | PG-TDSON-8 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +175 C | -55 C to +175 C |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (Power MOSFET) |
| Gate Drive (recommended) | 10 V (typical) | — |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Series | — | OptiMOS 5 |
| Part Number | — | ISC0802NLSATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 150 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| RDS(on) max at VGS=10V | — | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | — | 2.5 W |
| Power Dissipation (Pd) at Tc | — | 125 W |
| Kemasan | — | PG-TDSON-8-7 (SuperSO8 5x6 mm) |