ISC058N04NM5ATMA1 vs IQD005N04NM6CGATMA1 Perbandingan

Perbandingan bersamaan detil ISC058N04NM5ATMA1 dari Infineon dan IQD005N04NM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC058N04NM5ATMA1 IQD005N04NM6CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 40V Normal Level —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TTFN-9-U02 (Source-Down 5x6 mm²)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 6 (trench FET)
Rentang Suhu Kerja -55C to +175C -55 °C to +150 °C (TJ)
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
RDS(on) Typical — 0.5 mΩ
Continuous Drain Current (ID) at Ta — 58 A
Continuous Drain Current (ID) at Tc — 610 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed rating]
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 333 W
Jumlah Pin — 9
Level MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant
Lead-Free — Yes
Source Configuration — Source-Down (bottom-side source for PCB heatsinking)

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