ISC058N04NM5ATMA1 vs IQD005N04NM6CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC058N04NM5ATMA1 sa pamamagitan ng Infineon at IQD005N04NM6CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ NakahandaInfineon
IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon
IQD005N04NM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC058N04NM5ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| Packhaging | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 (trench FET) |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 °C to +150 °C (TJ) |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| Bilang ng Pin | — | 9 |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |