ISC060N06NM6ATMA1 vs ISC037N12NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC060N06NM6ATMA1 dari Infineon dan ISC037N12NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC060N06NM6ATMA1 ISC037N12NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 15.2 A —
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 50 W —
Paket PG-TDSON-8 (TDSON-8) PG-TDSON-8 FL (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) OptiMOS 6 (N-channel trench MOSFET)
Configuration Single N-Channel —
Rentang Suhu Kerja -55C to +175C (junction, per OptiMOS 6 family) -55C to +175C (junction)
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] —
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Avalanche Energy Rated — Yes (single-pulse)

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