ISC060N06NM6ATMA1 vs ISC037N12NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC060N06NM6ATMA1 disebabkan oleh Infineon dan ISC037N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC060N06NM6ATMA1 ISC037N12NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 15.2 A —
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 50 W —
Kemasan PG-TDSON-8 (TDSON-8) PG-TDSON-8 FL (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) OptiMOS 6 (N-channel trench MOSFET)
Configuration Single N-Channel —
Gambaran Suhu Operasi -55C to +175C (junction, per OptiMOS 6 family) -55C to +175C (junction)
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] —
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Avalanche Energy Rated — Yes (single-pulse)

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