ISC060N06NM6ATMA1 vs ISZ072N06NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC060N06NM6ATMA1 dari Infineon dan ISZ072N06NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC060N06NM6ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 15.2 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Paket | PG-TDSON-8 (TDSON-8) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 6 trench MOSFET |
| Configuration | Single N-Channel | — |
| Rentang Suhu Kerja | -55C to +175C (junction, per OptiMOS 6 family) | -55C to +175C ( Tj max 175C ) |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 3.3 V (typ) |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | — |
| Product Family | — | OptiMOS 6 60V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25°C) | — | 57 A |
| Continuous Drain Current (ID, Ta) | — | 12.7 A |
| RDS(on) max @ VGS=10V | — | 7.2 mΩ |
| Dissipasi Listrik (TC=25°C) | — | 50 W |
| Power Dissipation (Ta) | — | 2.5 W |