ISC060N06NM6ATMA1 vs ISZ072N06NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC060N06NM6ATMA1 disebabkan oleh Infineon dan ISZ072N06NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISZ072N06NM6ATMA1 ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC060N06NM6ATMA1 ISZ072N06NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 15.2 A —
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 50 W —
Kemasan PG-TDSON-8 (TDSON-8) PG-TSDSON-8-34 (TSDSON-8 FL)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) OptiMOS 6 trench MOSFET
Configuration Single N-Channel —
Gambaran Suhu Operasi -55C to +175C (junction, per OptiMOS 6 family) -55C to +175C ( Tj max 175C )
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] 1
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 3.3 V (typ)
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] —
Product Family — OptiMOS 6 60V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID, Tc=25°C) — 57 A
Continuous Drain Current (ID, Ta) — 12.7 A
RDS(on) max @ VGS=10V — 7.2 mΩ
Pembuangan Kuasa (TC=25°C) — 50 W
Power Dissipation (Ta) — 2.5 W

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