ISC060N10NM6ATMA1 vs BSC0906NSATMA1 Perbandingan
Perbandingan bersamaan detil ISC060N10NM6ATMA1 dari Infineon dan BSC0906NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC060N10NM6ATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 100 V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 15 A | 18 A |
| Continuous Drain Current (ID) at Tc | 97 A | 63 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | -55C to +150C (junction, typical) |
| Paket | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS |
| Polarity | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ VGS=10V] |
| Jumlah Pin | — | 8 |