ISC060N10NM6ATMA1 vs BSC0906NSATMA1 Comparison

Detailed side-by-side comparison of ISC060N10NM6ATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0906NSATMA1 BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 βœ“ Active

Specification Comparison

Parameter ISC060N10NM6ATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.43 $0.48
Manufacturer Infineon Technologies β€”
Series OptiMOS 6 100 V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Ta 15 A 18 A
Continuous Drain Current (ID) at Tc 97 A 63 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Drain-Source On-Resistance (RDS(on)) 6 mΞ© at VGS = 10 V, ID = 25 A β€”
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (PD) at Ta 3 W β€”
Power Dissipation (PD) at Tc 125 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55C to +150C (junction, typical)
Package PG-TDSON-8 FL (5.15 x 6.15 mm) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) OptiMOS
Polarity N-Channel β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 30 V
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 30 W
RDS(on) max (typical reference) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg @ VGS=10V]
Pin Count β€” 8

Datasheets & Resources

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