ISC060N10NM6ATMA1 vs BSC0906NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC060N10NM6ATMA1 disebabkan oleh Infineon dan BSC0906NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC060N10NM6ATMA1 BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 100 V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 15 A 18 A
Continuous Drain Current (ID) at Tc 97 A 63 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on)) 6 mΩ at VGS = 10 V, ID = 25 A —
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 125 W —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55C to +150C (junction, typical)
Kemasan PG-TDSON-8 FL (5.15 x 6.15 mm) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) OptiMOS
Polarity N-Channel —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ VGS=10V]
Kiraan Pin — 8

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