ISC060N10NM6ATMA1 vs ISC080N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC060N10NM6ATMA1 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC060N10NM6ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 100 V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 15 A 13 A
Continuous Drain Current (ID) at Tc 97 A 75 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on)) 6 mΩ at VGS = 10 V, ID = 25 A —
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 125 W 100 W
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55°C to +175°C (TJ max, per datasheet)
Paket PG-TDSON-8 FL (5.15 x 6.15 mm) PG-TDSON-8 FL (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) —
Polarity N-Channel —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per datasheet)
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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