ISC060N10NM6ATMA1 vs ISC080N10NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC060N10NM6ATMA1 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC060N10NM6ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 100 V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 15 A 13 A
Continuous Drain Current (ID) at Tc 97 A 75 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on)) 6 mΩ at VGS = 10 V, ID = 25 A —
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 125 W 100 W
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55°C to +175°C (TJ max, per datasheet)
Kemasan PG-TDSON-8 FL (5.15 x 6.15 mm) PG-TDSON-8 FL (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) —
Polarity N-Channel —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per datasheet)
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Lead-Free — Yes
Boson Bebas — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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