ISC060N10NM6ATMA1 vs ISC110N12NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC060N10NM6ATMA1 dari Infineon dan ISC110N12NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC060N10NM6ATMA1 ISC110N12NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 100 V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 120 V
Continuous Drain Current (ID) at Ta 15 A 11 A
Continuous Drain Current (ID) at Tc 97 A 62 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on)) 6 mΩ at VGS = 10 V, ID = 25 A —
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 125 W —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) —
Paket PG-TDSON-8 FL (5.15 x 6.15 mm) SuperSO8 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) —
Polarity N-Channel N-Channel
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) —
On-Resistance RDS(on) max at VGS=10V — 9.8 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) typ — 3.1 V
Total Gate Charge (Qg) — 15.4 nC
Input Capacitance (Ciss) — 1.1 nF
Output Capacitance (Coss) — 330 pF
Reverse Transfer Capacitance (Crss) — 10 pF
Power Dissipation (Pd) at Tc — 94 W
Power Dissipation (Pd) at Ta — 3 W
Avalanche Energy (EAS) — 185 mJ
Suhu Hubung Kerja — -55 °C to +175 °C

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