ISC060N10NM6ATMA1 vs ISC110N12NM6ATMA1 比較
詳細並排比較 ISC060N10NM6ATMA1 由 Infineon 與 ISC110N12NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC060N10NM6ATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 100 V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at Ta | 15 A | 11 A |
| Continuous Drain Current (ID) at Tc | 97 A | 62 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| 工作溫度範圍 | -55 °C to +175 °C (TJ) | — |
| 封裝 | PG-TDSON-8 FL (5.15 x 6.15 mm) | SuperSO8 (TDSON-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | — |
| Polarity | N-Channel | N-Channel |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| On-Resistance RDS(on) max at VGS=10V | — | 9.8 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.1 V |
| Total Gate Charge (Qg) | — | 15.4 nC |
| Input Capacitance (Ciss) | — | 1.1 nF |
| Output Capacitance (Coss) | — | 330 pF |
| Reverse Transfer Capacitance (Crss) | — | 10 pF |
| Power Dissipation (Pd) at Tc | — | 94 W |
| Power Dissipation (Pd) at Ta | — | 3 W |
| Avalanche Energy (EAS) | — | 185 mJ |
| 工作接面溫度 | — | -55 °C to +175 °C |