ISC0703NLSATMA1 vs BSC077N12NS3GATMA1 Perbandingan

Perbandingan bersamaan detil ISC0703NLSATMA1 dari Infineon dan BSC077N12NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC0703NLSATMA1 BSC077N12NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 120 V
Continuous Drain Current (ID) at Ta=25C 13 A —
Continuous Drain Current (ID) at Tc=25C 57 A —
Power Dissipation (PD) at Ta=25C 3 W —
Power Dissipation (PD) at Tc=25C 44 W —
Technology Trench MOSFET (OptiMOS family) —
Paket PG-TDSON-8 (5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Standard Package Quantity 5,000 (reel) —
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Avalanche Energy (EAS) [DATA_NEEDED: EAS rating] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 3 (120 V)
Tipe Transistor — N-Channel MOSFET (enhancement-mode trench)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta — 13.4 A
Continuous Drain Current (ID) at Tc — 98 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V — 7.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.5 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (PD) at Tc — 139 W
Suhu Hubung Kerja — -55C to +150C
Jumlah Pin — 8
Automotive Grade — Yes (per Infineon part number suffix / datasheet)

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