ISC0703NLSATMA1 vs BSC077N12NS3GATMA1 比較
詳細並排比較 ISC0703NLSATMA1 由 Infineon 與 BSC077N12NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC0703NLSATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=25C | 57 A | — |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | — |
| 封裝 | PG-TDSON-8 (5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| Standard Package Quantity | 5,000 (reel) | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 (120 V) |
| 電晶體類型 | — | N-Channel MOSFET (enhancement-mode trench) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| 工作接面溫度 | — | -55C to +150C |
| 腳位數 | — | 8 |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |