ISC110N12NM6ATMA1 vs IQE036N08NM6CGSCATMA1 Perbandingan

Perbandingan bersamaan detil ISC110N12NM6ATMA1 dari Infineon dan IQE036N08NM6CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC110N12NM6ATMA1 IQE036N08NM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 120 V 80 V
Continuous Drain Current (ID) at Ta 11 A —
Continuous Drain Current (ID) at Tc 62 A —
On-Resistance RDS(on) max at VGS=10V 9.8 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ 3.1 V —
Total Gate Charge (Qg) 15.4 nC —
Input Capacitance (Ciss) 1.1 nF —
Output Capacitance (Coss) 330 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Power Dissipation (Pd) at Tc 94 W —
Power Dissipation (Pd) at Ta 3 W —
Avalanche Energy (EAS) 185 mJ —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket SuperSO8 (TDSON-8) —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at TA — 16.7 A
Continuous Drain Current (ID) at TC — 118 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 125 W
Paket / Case — PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Technology — Trench MOSFET (OptiMOS 6)
Configuration — Source Down, Center Gate, Dual-Side Cooling
Rentang Suhu Kerja — -55 C to +150 C (junction, per datasheet derating curves)
Packing — Tape and Reel (suffix ATMA1)
Voltage Rating — 60 V to 100 V category (80 V nominal)

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IQE036N08NM6CGSCATMA1

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