ISC110N12NM6ATMA1 vs IQE036N08NM6CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC110N12NM6ATMA1 disebabkan oleh Infineon dan IQE036N08NM6CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC110N12NM6ATMA1 IQE036N08NM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 120 V 80 V
Continuous Drain Current (ID) at Ta 11 A —
Continuous Drain Current (ID) at Tc 62 A —
On-Resistance RDS(on) max at VGS=10V 9.8 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ 3.1 V —
Total Gate Charge (Qg) 15.4 nC —
Input Capacitance (Ciss) 1.1 nF —
Output Capacitance (Coss) 330 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Power Dissipation (Pd) at Tc 94 W —
Power Dissipation (Pd) at Ta 3 W —
Avalanche Energy (EAS) 185 mJ —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan SuperSO8 (TDSON-8) —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at TA — 16.7 A
Continuous Drain Current (ID) at TC — 118 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 125 W
Kemasan / Case — PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Technology — Trench MOSFET (OptiMOS 6)
Configuration — Source Down, Center Gate, Dual-Side Cooling
Gambaran Suhu Operasi — -55 C to +150 C (junction, per datasheet derating curves)
Packing — Tape and Reel (suffix ATMA1)
Voltage Rating — 60 V to 100 V category (80 V nominal)

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