ISZ028N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Perbandingan

Perbandingan bersamaan detil ISZ028N03LF2SATMA1 dari Infineon dan ISC025N08NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISZ028N03LF2SATMA1 ISC025N08NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology StrongIRFET 2 (Trench MOSFET) MOSFET (Metal Oxide), OptiMOS 5 LF2
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V —
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Paket PG-TSDSON-8 FL (FL = flat lead) PG-TDSON-8 FL (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (junction, typical) [DATA_NEEDED: operating temperature range]
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
Status RoHS Compliant Compliant
Level MSL 1 —
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) @ TA=25°C — 23 A
Continuous Drain Current (ID) @ TC=25°C — 198 A
On-Resistance (RDS(on)) Max — 2.55 mΩ
Gate-Source Threshold (VGS(th)) Max — 3.9 V
Total Gate Charge (Qg) Max — 96 nC
Power Dissipation @ TA — 3 W
Power Dissipation @ TC — 217 W
Polarity — N-Channel
Ordering Code Suffix — ATMA1 (Tape & Reel, 13-inch)

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