ISZ028N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ028N03LF2SATMA1 disebabkan oleh Infineon dan ISC025N08NM5LF2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISZ028N03LF2SATMA1 ISC025N08NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology StrongIRFET 2 (Trench MOSFET) MOSFET (Metal Oxide), OptiMOS 5 LF2
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V —
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Kemasan PG-TSDSON-8 FL (FL = flat lead) PG-TDSON-8 FL (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction, typical) [DATA_NEEDED: operating temperature range]
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
Status RoHS Compliant Compliant
Aras MSL 1 —
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) @ TA=25°C — 23 A
Continuous Drain Current (ID) @ TC=25°C — 198 A
On-Resistance (RDS(on)) Max — 2.55 mΩ
Gate-Source Threshold (VGS(th)) Max — 3.9 V
Total Gate Charge (Qg) Max — 96 nC
Power Dissipation @ TA — 3 W
Power Dissipation @ TC — 217 W
Polarity — N-Channel
Ordering Code Suffix — ATMA1 (Tape & Reel, 13-inch)

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