ISZ028N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ028N03LF2SATMA1 sa pamamagitan ng Infineon at ISC025N08NM5LF2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ NakahandaInfineon
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ028N03LF2SATMA1 | ISC025N08NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | MOSFET (Metal Oxide), OptiMOS 5 LF2 |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Packhaging | PG-TSDSON-8 FL (FL = flat lead) | PG-TDSON-8 FL (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction, typical) | [DATA_NEEDED: operating temperature range] |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) @ TA=25°C | — | 23 A |
| Continuous Drain Current (ID) @ TC=25°C | — | 198 A |
| On-Resistance (RDS(on)) Max | — | 2.55 mΩ |
| Gate-Source Threshold (VGS(th)) Max | — | 3.9 V |
| Total Gate Charge (Qg) Max | — | 96 nC |
| Power Dissipation @ TA | — | 3 W |
| Power Dissipation @ TC | — | 217 W |
| Polarity | — | N-Channel |
| Ordering Code Suffix | — | ATMA1 (Tape & Reel, 13-inch) |