ISZ028N03LF2SATMA1 vs ISZ019N03L5SATMA1 Perbandingan

Perbandingan bersamaan detil ISZ028N03LF2SATMA1 dari Infineon dan ISZ019N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ028N03LF2SATMA1 ISZ019N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET 2 (Trench MOSFET) —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V 2 V (typical)
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Paket PG-TSDSON-8 FL (FL = flat lead) PG-TSDSON-8-FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (junction, typical) -55C to +175C (TJ max)
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
Status RoHS Compliant —
Level MSL 1 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] 44 nC at VGS=10V
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 (<= 40V)
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 22 A
Continuous Drain Current (ID) at TC=25C — 40 A
RDS(on) at VGS=10V — 1.9 mΩ (typical, ID=20A)
Gate-Source Voltage Rating (VGS) — ±20 V
Input Capacitance (Ciss) — 2800 pF at VDS=15V
RoHS / REACH — Compliant
Avalanche Rated — Yes
RG-tested — 100%

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon