ISZ056N03LF2SATMA1 vs BSC0921NDIATMA1 Perbandingan

Perbandingan bersamaan detil ISZ056N03LF2SATMA1 dari Infineon dan BSC0921NDIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ056N03LF2SATMA1 BSC0921NDIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series StrongIRFET 2 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 16 A —
Continuous Drain Current (ID) at Tc 72 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 31 A (per channel, package-limited)
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) —
On-Resistance (RDS(on)) max at VGS=10V 5.6 mOhm —
On-Resistance (RDS(on)) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 52 W —
Rentang Suhu Kerja -55 C to +175 C —
Paket PG-TSDSON-8 (PQFN 3.3x3.3 mm) PG-TISON-8 (8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Technology — OptiMOS 25V (N-channel)
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 17 A (per channel)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Suhu Kerja — -55C to +150C (junction)
Level MSL — 1 (per Infineon OptiMOS family)
Primary Application — Synchronous buck converters, VRMs, POL regulators

Spek dan Sumber

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