ISZ056N03LF2SATMA1 vs IMLT40R011M2HXTMA1 Perbandingan

Perbandingan bersamaan detil ISZ056N03LF2SATMA1 dari Infineon dan IMLT40R011M2HXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ056N03LF2SATMA1 IMLT40R011M2HXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series StrongIRFET 2 —
Tipe Transistor N-Channel MOSFET N-Channel SiC MOSFET
Drain-Source Voltage (VDS) 30 V 400 V
Continuous Drain Current (ID) at Ta 16 A —
Continuous Drain Current (ID) at Tc 72 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) 4.5 V (benchmark)
On-Resistance (RDS(on)) max at VGS=10V 5.6 mOhm —
On-Resistance (RDS(on)) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 52 W —
Rentang Suhu Kerja -55 C to +175 C —
Paket PG-TSDSON-8 (PQFN 3.3x3.3 mm) PG-HDSOP-16-8 (surface mount, top-side cooled)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Product Family — CoolSiC MOSFET 400V G2
Continuous Drain Current (ID, Tc) — 144 A
Power Dissipation (PD, Tc) — 429 W
On-State Resistance (RDS(on)) — 11 mΩ (typ)
Recommended Gate Drive Voltage — 0 V to 18 V
Technology — Silicon Carbide (SiC) Gen-2
Body Diode — Commutation-robust fast body diode, low Qrr
Avalanche Rating — 100% avalanche tested
Interconnection Technology — XT (best-in-class thermal performance)
Operating Mode — Enhancement mode
Target Topologies — 2- and 3-level hard- and soft-switching
Target Applications — AI server PSU, SMPS, motor drives

Spek dan Sumber

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