ISZ230N10NM6ATMA1 vs IQE020N04LM6CGSCATMA1 Perbandingan
Perbandingan bersamaan detil ISZ230N10NM6ATMA1 dari Infineon dan IQE020N04LM6CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISZ230N10NM6ATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 trench |
| Paket | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction) | -55 °C to +150 °C (junction, per Infineon MOSFET convention) |
| Gate Drive Voltage (recommended) | 10 V | — |
| Level MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| Status RoHS | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current at TA=25°C | — | 25 A |
| Continuous Drain Current at TC=25°C | — | 166 A |
| Maximum RDS(on) | — | 2.0 mΩ (per IQE part-number decode) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 107 W |
| Jumlah Pin | — | 9 |
| Lead-Free | — | Yes |