ITS716GFUMA1 vs ITS4200SSJDXUMA1 Perbandingan

Perbandingan bersamaan detil ITS716GFUMA1 dari Infineon dan ITS4200SSJDXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ITS716GFUMA1 ITS4200SSJDXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch —
Number of Channels 4 —
Konfigurasi Output High-side (N-Channel MOSFET) Single high-side switch
Continuous Current per Channel 2.3 A —
On-State Resistance (RON) per Channel [DATA_NEEDED: Ron typical value] —
Operating Voltage Range (Vbb) 5 V to 36 V —
Load Dump Tolerance Up to 45 V —
Standby Current [DATA_NEEDED: Iq standby typical] —
Input Logic Levels CMOS/TTL compatible, parallel interface —
Diagnostic Output Open-drain fault flag, one per channel Status pin for fault feedback
Protection Features Overload, short-circuit, over-temperature, over-voltage, ESD Overload, current limit, short circuit, thermal shutdown with restart, overvoltage (load dump), undervoltage shutdown
PWM Capability Up to 1 kHz —
Rentang Suhu Kerja -40 C to +85 C (industrial grade) —
Paket PG-DSO-20-32 (20-pin SOIC, exposed pad) PG-DSO-8 (DSO-8)
Tahanan Panas, Hubung-lingkungan [DATA_NEEDED: theta_JA value] —
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — PROFET (MINI-PROFET)
Switch Type — High-Side N-Channel, 1:1
On-State Resistance (R_DS(on)) — 200 mOhm (typical)
Continuous Load Current — 1.2 A
Supply Voltage (Vbb) — 6 V to 52 V
Arus Memerintah — 0.8 mA
Maximum Power Dissipation — 1400 mW
Suhu Kerja — -40 C to +150 C
Load Type — Resistive and inductive loads

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