K3LKBKB0BM-MGCP vs K3K8K80BM-MGCP Perbandingan
Perbandingan bersamaan detil K3LKBKB0BM-MGCP dari Samsung Electronics dan K3K8K80BM-MGCP dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K3LKBKB0BM-MGCP | K3K8K80BM-MGCP |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $46,62 | — |
| Tipe Memori | DRAM (LPDDR5 SDRAM) | LPDDR5 SDRAM (DRAM) |
| Ukuran Memori | 32 Gbit | — |
| Organisasi | 1G x 32 | 2G x 32 |
| Laju Data | 6400 Mbps per pin | 6400 Mbps |
| Supply Voltage Rails | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| Antarmuka | LPDDR5 x32 | LPDDR5 (CMOS) |
| Paket | FBGA-315 | FBGA-315 (PBGA315) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -25C to +85C | -25C to +85C |
| Technology Generation | LPDDR5 (JEDEC LPDDR5 family) | — |
| Status RoHS | Compliant | Compliant |
| Density per Package | 4 GB (32 Gbit) | — |
| Refresh | Self-refresh and auto-refresh (LPDDR5 standard) | — |
| Application Segment | Mobile, embedded, industrial computing | — |
| Standby / Deep Sleep | LPDDR5 deep-sleep power states | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Access Time / Latency | [DATA_NEEDED: CAS latency] | — |
| Density | — | 64 Gb |
| Supply Voltages | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Technology | — | CMOS |
| Memory Category | — | Volatile DRAM |
| Lead Free | — | Yes |
| Application Class | — | Specialized ICs / Memory |
| I/O Width | — | 32-bit |