K4A4G165WD-BCPB vs K4A4G165WF-BCTD Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCPB dari Samsung Electronics dan K4A4G165WF-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCPB | K4A4G165WF-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $8,20 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| Paket | FBGA-96 | FBGA-96 (PBGA96) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| Antarmuka | DDR4 (synchronous, source-synchronous strobe) | SSTL-12 |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| Status RoHS | Compliant (lead-free suffix) | Compliant |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | Self-refresh and auto-refresh supported |
| Ukuran Memori | — | 4 Gbit |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Fitur | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |