K4A4G165WF-BCWE vs K4A4G165WE-BCTD Perbandingan
Perbandingan bersamaan detil K4A4G165WF-BCWE dari Samsung Electronics dan K4A4G165WE-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WF-BCWE | K4A4G165WE-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $10,65 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Memory Density | 4 Gbit | — |
| Organisasi | 256M x 16 | — |
| Laju Data | 3200 Mbps | — |
| Clock Frequency | 1.6 GHz | — |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | — |
| Access Time | 19 ns | — |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Paket | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel | Parallel, x16 |
| Die Generation | Samsung F-die | E-die |
| Data Mask | Supported (DM) | — |
| ZQ Calibration | Supported | — |
| On-Die Termination | Dynamic ODT supported | — |
| CRC | Supported | — |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant (per JLCPCB listing) |
| Ukuran Memori | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |