K4A8G165WB-BCTD vs K4A8G165WC-BCRC Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCTD dari Samsung Electronics dan K4A8G165WC-BCRC dari Samsung Electro-Mechanics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifSamsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCTD | K4A8G165WC-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | DRAM | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $19,69 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Laju Data | 2666 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Suhu Kerja | 0C to +85C | 0 C to +95 C |
| Paket | 96FBGA | 96-FBGA (TFBGA) |
| Die Generation | B-die | C-die |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Antarmuka | DDR4 (parallel, double data rate) | Parallel, 16-bit DDR |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Status RoHS | Compliant (per JLCPCB listing: ROHS) | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Ukuran Memori | — | 8 Gbit |
| Clock Frequency | — | 1333 MHz |
| Tegangan Pemuat | — | 1.2 V (1.14 V to 1.26 V) |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Fitur | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Memory Format | — | DRAM |