K4AAG085WA-BCTD vs K4AAG085WM-BCWE Perbandingan
Perbandingan bersamaan detil K4AAG085WA-BCTD dari Samsung Electronics dan K4AAG085WM-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4AAG085WA-BCTD | K4AAG085WM-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | 16 Gb |
| Organisasi | 2G x 8 | 2G x 8 |
| Laju Data | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Paket | 78-ball FBGA (78FBGA) | 78FBGA |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Speed Grade | DDR4-2666 (-BCTD) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | DDR4 parallel, JEDEC DDR4 ballout | DDR4 (JEDEC-standard) |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Burst Length | BL8 (DDR4 standard) | — |
| Application Domain | Computing, networking, industrial memory | — |
| Manufacturing Standard | JEDEC DDR4 SDRAM | — |
| Lead Time / Stock | [DATA_NEEDED: current stock status] | — |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| Level MSL | — | [DATA_NEEDED: MSL level] |