K4B4G1646I-BYK0 vs K4B4G1646E-BYK0 Perbandingan
Perbandingan bersamaan detil K4B4G1646I-BYK0 dari Samsung Electronics dan K4B4G1646E-BYK0 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646I-BYK0 | K4B4G1646E-BYK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemuat | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| Laju Data | 1866 Mbps | DDR3-1600 (800 MHz) |
| Clock Frequency | 933 MHz | — |
| Paket | FBGA-96 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Suhu Kerja | 0°C to 95°C (Tc) | 0°C to +95°C (TC) |
| Antarmuka | Parallel | — |
| Number of Banks | 8 | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 11 (CL-tRCD-tRP) |
| Burst Length | 8, 4 | 8 (fixed), 4 (burst chop) |
| RoHS | Compliant | Compliant |
| Tipe Mounting | Surface Mount | — |
| Lead-Free | Yes | — |
| Density | — | 4 Gb |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |