K4RAH165VB-BCQK vs PDRQLAKCDF12-00 Perbandingan
Perbandingan bersamaan detil K4RAH165VB-BCQK dari Samsung Electronics dan PDRQLAKCDF12-00 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ AktifSamsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4RAH165VB-BCQK | PDRQLAKCDF12-00 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Laju Data | 4800 Mbps | 7200 Mbps per pin |
| Supply Voltage (VDD) | 1.1 V | — |
| Error Correction | On-die ECC | — |
| Fitur | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration | — |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Paket | 106-ball FBGA | 102-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Unit Price | [DATA_NEEDED: unit price] | — |
| Density | — | 16 Gbit |
| Organisasi | — | 1G x 16 |
| Speed Bin | — | DDR5-7200 |
| Operating Voltage | — | 1.1 V |
| Generation | — | DDR5 (improved from 6400 Mbps generation) |
| Antarmuka | — | JEDEC DDR5 |
| Package Height | — | [DATA_NEEDED: package height] |
| tCK / Cycle Time | — | [DATA_NEEDED: clock cycle time] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |