M29F400FB55N3F2 vs M29F200FB55N3F2 Perbandingan
Perbandingan bersamaan detil M29F400FB55N3F2 dari Micron Technology dan M29F200FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F400FB55N3F2 | M29F200FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | Parallel NOR Flash |
| Density | 4 Mbit (4194 kbit) | 2 Mbit (2097 kbits) |
| Organisasi | 256K x 16 / 512K x 8 | 256K x 8 bit / 128K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | — |
| Antarmuka | Parallel | Parallel |
| Boot Block | Bottom boot block | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Paket | 48-TSOP I | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| Status RoHS | Compliant (lead-free build per F2 suffix) | [DATA_NEEDED: RoHS compliance status] |
| Number of Words | — | 128 K (x16 mode) |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Architecture | — | Bottom Boot Block (FB) |
| Programming | — | Embedded byte/word program algorithm |
| Erase | — | Embedded block erase controller |
| Packaging | — | Tape & Reel (TR) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |